A Study on Key Process Technologies of 4H Silicon Carbide Trench Gate Power MOSFETs
博士 === 國立交通大學 === 電子研究所 === 105 === As the growing demand for power saving and carbon reduction, wide bandgap semiconductor materials are vastly discussed to be the next-generation power device. With a general reduction in power loss, devices made of wide bandgap semiconductor surpass Si power devic...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75242979286958189512 |