Enhancement of Oxidation rate of 4H-SiC by Ion Implantation and a Study on the Trench Junction Barrier Schottky Diode
碩士 === 國立交通大學 === 電子研究所 === 105 === Silicon Carbide (SiC) is a wide bandgap semiconductor. Due to its high critical electric field and high thermal conductivity, it is suitable for fabricating high power devices especially those devices operating under high voltage and high temperature conditions. S...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88308005698048109628 |