Design, Simulation and Development of Advanced Gallium Nitride Based High Electron Mobility Transistors for Power Electronic Applications
博士 === 國立交通大學 === 材料科學與工程學系所 === 105 === During the past few years, tremendous success has been achieved in the development of high power switching devices by using Gallium nitride (GaN) based High Electron Mobility Transistors (HEMTs). However, inherent normally on operation of GaN HEMT due to high...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/sgj8ra |