Resistive Switching Characteristics of Transparent ZnO-based Devices Enhanced by Electrode Engineering and Dopant
博士 === 國立交通大學 === 材料科學與工程學系所 === 105 === Resistive memory is believed to be the most promising technology for the future nonvolatile memory. In addition, the need of transparent electronic devices is compulsory for wearable gadget application. In this thesis, we report the development of ZnO-based t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/2t3a9v |