High Sensitivity Nitric Oxide Gas Sensor Based on Poly-Si Nanowires FETs

High Sensitivity Nitric Oxide Gas Sensor Based on Poly-Si Nanowires FETs

碩士 === 國立交通大學 === 光電工程研究所 === 105 === In this thesis, the low nitric oxide (NO) gas level sensing property of poly-Si nanowires field effect transistors (FETs) was investigated. The blank and surface modified with metal phthalocyanine (Pc) and metal hexadecafluorophthalocyanine (F16Pc) poly-Si nanow...

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Bibliographic Details
Main Authors:	Cheng, Ting-Ya, 鄭定亞
Other Authors:	Chen Huang-Ming
Format:	Others
Language:	zh-TW
Published:	2016
Online Access:	http://ndltd.ncl.edu.tw/handle/70767495185064792381

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