High Sensitivity Nitric Oxide Gas Sensor Based on Poly-Si Nanowires FETs
碩士 === 國立交通大學 === 光電工程研究所 === 105 === In this thesis, the low nitric oxide (NO) gas level sensing property of poly-Si nanowires field effect transistors (FETs) was investigated. The blank and surface modified with metal phthalocyanine (Pc) and metal hexadecafluorophthalocyanine (F16Pc) poly-Si nanow...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70767495185064792381 |