High Sensitivity Nitric Oxide Gas Sensor Based on Poly-Si Nanowires FETs

• Main Authors: Cheng, Ting-Ya, 鄭定亞
• Other Authors: Chen Huang-Ming
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/70767495185064792381

碩士 === 國立交通大學 === 光電工程研究所 === 105 === In this thesis, the low nitric oxide (NO) gas level sensing property of poly-Si nanowires field effect transistors (FETs) was investigated. The blank and surface modified with metal phthalocyanine (Pc) and metal hexadecafluorophthalocyanine (F16Pc) poly-Si nanowires FET devices were investigated. In particular, the chemical structure and physical properties of these surface modification compounds were discussed. The sensing properties can be enhanced due to the strong bonding between nitric oxide molecule and the Pc compounds. Besides, the sensing ability of device under different relative humidity was also investigated. The results suggested that the bonding between gas molecule and center of metal phthalocyanine could be very strong. As a result, the oxidation reaction on the contact surface may contribute to the low nitric oxide gas level sensing ability. Therefore, the surface modified poly-Si nanowires FET is a perfect device for detection of low nitric oxide gas level as in the breath of asthma patients.