Growth of thick GaN film with low dislocation density on Si(111) substrate by inserting LT-AlGaN interlayer and HP-GaN nucleation layer
碩士 === 國立交通大學 === 光電系統研究所 === 105 === GaN shows many superior physical properties such as wide bandgap, high carrier velocity, high breakdown field and good thermal conductivity. Therefore, normal AlGaN/GaN HEMTs show characteristics of high breakdown voltage and high current. Furthermore, normal Al...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/eg83gx |