| Summary: | 碩士 === 國立暨南國際大學 === 光電科技碩士學位學程在職專班 === 105 === The Porous silicon structure has many high-quality special properties, widely used in semiconductor, energy and sensors and other fields, porous silicon structure development process technology plays a key role. This study is to explore a simple and rapid metal-assisted chemical etching technique (metal-assisted chemical etching MACE), and the special properties of porous silicon produced under no power, formerly in different solids. The liquid, gas and electrochemical etching method can be used to produce large area and homogeneous porous silicon structure under normal temperature and under normal pressure, to discuss the structure of porous silicon grown by this reaction, in different metal layers, silicon substrate impedance, etching solution. The formation reaction of thickness and reaction time is discussed, and the surface morphology and image analysis of porous silicon structure are observed by electron microscope. After experiments, the metal species will affect the etching rate, when the thickness of the metal film of the reaction increases, the structure will gradually turn into an independent and evenly distributed dendritic structure. This achieves simpler, faster and low cost advantages, the silicon substrate surface with the non-electrode technology to reach the deposition metal layer, bounded by the changes of Jin Naimi particles can be more small and dense pore-like, column and columnar structure, the practical application possibilities.
Keywords：Metal-assisted chemical etching MACE、Porous silicon
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