Characterization and Analysis of Oxide Interface Charge for FinFETs
碩士 === 國立成功大學 === 奈米積體電路工程碩士學位學程 === 105 === With the progress of semiconductor process and device scaling, there is serious short channel effect when proceeding the scaling of transistors. Increasing the gate controllability by multi gate structure is one of methods to improve the short channel eff...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/rbn262 |