Investigations of RF Sputtered AlN Thin Films with Different Orientations and Its Applications on Resistive Random Access Memories
碩士 === 國立成功大學 === 電機工程學系 === 105 === In recent years, the memory technology of semiconductor industry has been well developed. Resistance random access memory (RRAM) has potential to replace FLASH memory position in the nonvolatile memory (NVM). Because conductive bridge random access memory (CBRAM)...
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| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/x7v2nm |