Effects of Processing Condition and Al2O3 Substrate Pretreatment on the Electrical Properties of Ni-Cr-Si Based Thin Film Resistor

博士 === 國立成功大學 === 電機工程學系 === 105

Bibliographic Details
Main Authors: Chen-SuChiang, 江承書
Other Authors: Wen-Hsi Lee
Format: Others
Language:en_US
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/sk599a
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spelling ndltd-TW-105NCKU54420372019-05-15T23:47:00Z http://ndltd.ncl.edu.tw/handle/sk599a Effects of Processing Condition and Al2O3 Substrate Pretreatment on the Electrical Properties of Ni-Cr-Si Based Thin Film Resistor 製程條件與氧化鋁基板之前處理對鎳鉻矽薄膜電阻電性之影響 Chen-SuChiang 江承書 博士 國立成功大學 電機工程學系 105 Wen-Hsi Lee 李文熙 2017 學位論文 ; thesis 99 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 博士 === 國立成功大學 === 電機工程學系 === 105
author2 Wen-Hsi Lee
author_facet Wen-Hsi Lee
Chen-SuChiang
江承書
author Chen-SuChiang
江承書
spellingShingle Chen-SuChiang
江承書
Effects of Processing Condition and Al2O3 Substrate Pretreatment on the Electrical Properties of Ni-Cr-Si Based Thin Film Resistor
author_sort Chen-SuChiang
title Effects of Processing Condition and Al2O3 Substrate Pretreatment on the Electrical Properties of Ni-Cr-Si Based Thin Film Resistor
title_short Effects of Processing Condition and Al2O3 Substrate Pretreatment on the Electrical Properties of Ni-Cr-Si Based Thin Film Resistor
title_full Effects of Processing Condition and Al2O3 Substrate Pretreatment on the Electrical Properties of Ni-Cr-Si Based Thin Film Resistor
title_fullStr Effects of Processing Condition and Al2O3 Substrate Pretreatment on the Electrical Properties of Ni-Cr-Si Based Thin Film Resistor
title_full_unstemmed Effects of Processing Condition and Al2O3 Substrate Pretreatment on the Electrical Properties of Ni-Cr-Si Based Thin Film Resistor
title_sort effects of processing condition and al2o3 substrate pretreatment on the electrical properties of ni-cr-si based thin film resistor
publishDate 2017
url http://ndltd.ncl.edu.tw/handle/sk599a
work_keys_str_mv AT chensuchiang effectsofprocessingconditionandal2o3substratepretreatmentontheelectricalpropertiesofnicrsibasedthinfilmresistor
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