Analysis on Hot Carrier Reliability for High Voltage MOS Device with Different Processes
碩士 === 國立成功大學 === 微電子工程研究所 === 105 === In this thesis, we investigated devices is High Voltage MOSFETs (HV-MOSFETs), and analysis hot carrier reliability for different Si recess depth. In our study, we have HV-MOSFETs with three different Si recess depth. The deepest to the shallowest range is about...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/jcnnfq |