Transferred Processes and Optoelectronic Properties on InGaN Light-Emitting Membranes
碩士 === 國立中興大學 === 材料科學與工程學系所 === 105 === In this study, InGaN-based light-emitting diodes were separated as a light-emitting membrane by electrochemical wet etching technique. The heavy Si-doped GaN sacrificial layer was inserted into the InGaN-based LED structure. High lateral wet etching rate on t...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/51255820353883036759 |