InGaAs Quantum Dot Vertical-Cavity Device Fabricated by Dry Etching
碩士 === 國立中興大學 === 光電工程研究所 === 105 === In this thesis, we successfully fabricate the InGaAs quantum dot vertical-cavity device by dry etching, photolithography, ALD, and metallization; and also analyze the optical and electrical properties of the device. For the sample, we grow 3-layer In0.65Ga0.35As...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74762285871571045215 |