Piezoresistance Model and Stress Analysis for 3D Transistor

• Main Authors: Shao-Kai Chang, 張少愷
• Other Authors: Shu-Tong Chang
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/50990033092997548837

碩士 === 國立中興大學 === 光電工程研究所 === 105 === The stress response of stressor to transistor in three-dimensional fin field-effect transistor is mainly researched in this paper. The research method is to draw the structure of fin field-effect transistor mainly by Ansys stress analysis emulator, emulate the stress distribution of three-dimensional channels of fin field-effect transistor modules under the finite element analysis (FEM) framework, and compare the effect of P-type and N-type field-effect transistors of different sizes and materials on stress intensity and distribution. ANSYS is directly used for drawing because it’s not easy to change the dimension parameters when SolidWorks is used to construct the structure of transistor. Finally, Sentaurus TCAD, second-order piezoresistance model and adjustment of second-order piezoresistance model are used to calculate the change of counter stress of mobility, and the difference and accuracy between the two piezoresistance models are discussed.