| Summary: | 碩士 === 義守大學 === 材料科學與工程學系 === 105 === In this study, the microstructural and nanomechanical properties of Cu-doped In2O3 thin films with various annealing temperatures of 700-900 ° C are investigated by using XRD, SEM and nanoindentation techniques. The Cu-doped In2O3 thin films are deposited on Corning glass substrates by using RF sputtering system.
The XRD results indicated that the intensity is enhanced with increasing the annealing temperature, that is the grain size of Cu-doped In2O3 thin films are increased. In addition, the nanomechanical properties of Cu-doped In2O3 thin films, are measured by nanoindentation with CSM mode. The values of hardness and Young’s modules of Cu-doped In2O3 thin films are ranged from 6 to13 GPa and ranged from 152 to 268 GPa, respectively.
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