| Summary: | 碩士 === 逢甲大學 === 電機工程學系 === 105 === This study was focused on the residual stress in single-layer and multilayer thin films, the residual stress in single and multilayer thin films was measured by a Twyman-Green interferometer combined with fast Fourier transform(FFT) method. A simulation program for the residual stress in multilayer films was developed by using MATLAB software, the program functions were used to show the stress evolution in multilayer thin films.
In this work, the silicon dioxide (SiO2), magnesium fluoride (MgF2), aluminum nitride (AlN) and aluminium oxynitride (AlON) thin films were prepared by different coating techniques. The thickness dependence of residual stress in these films were investigated. The different stacks design of multilayer films were prepared by high-power impulse magnetron sputtering (HiPIMS), the measured residual stress in multilayer films were compared with that of simulation results.
The results showed that the stress behavior in different multilayer films can be predicted by the self-developed simulation program. This simulation program can help us to save the time and cost in coating process.
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