Impact of Electrode Surface Morphology for ZnO-based Resistive Random Access Memory by Copper Chemical Displacement Technique
碩士 === 逢甲大學 === 電子工程學系 === 105 === The resistive random access memory is the most promising for novel nonvolatile memory, which has attracted much attention because of its advantages such as low power consumption, high operating speed, simple structure and good scalability. This paper is research fo...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/05678447014107261685 |