The Study of Luminescence and Electrical Properties of the Porous Silicon
碩士 === 大葉大學 === 電機工程學系 === 105 === In this study, porous silicon flims are fabricated by electrochemical etching at room temperature. The silicon porosity was controlled by the dependence of current density etching of time. In the dependence of temperature, the energy gap is determined by photolumi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/vguwpc |