Investigation of Normally-off p-GaN Gate HEMTs and Diodes Using Low Damage Etching Technique

Investigation of Normally-off p-GaN Gate HEMTs and Diodes Using Low Damage Etching Technique

碩士 === 長庚大學 === 電子工程學系 === 105

Bibliographic Details
Main Authors:	Bo Hong Li, 李柏宏
Other Authors:	H. C. Chiu
Format:	Others
Language:	zh-TW
Published:	2017
Online Access:	http://ndltd.ncl.edu.tw/handle/g76m45

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