Tailoring energy band alignment of vertically aligned InGaAs quantum dots capped with GaAs(Sb)/AlGaAsSb composite structure after thermal annealing treatment
碩士 === 元智大學 === 光電工程學系 === 104 === The effects of thermal annealing treatment on a vertically aligned InGaAs/GaAs(Sb)/AlGaAsSb quantum dot (QD) structure with the purpose of tailoring energy band alignment are studied. In contrast to the typical blueshift in the emission upon annealing because of In...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/565m95 |