| Summary: | 碩士 === 元智大學 === 光電工程學系 === 104 === Based on III-nitride semiconductor epitaxy growth on patterned sapphire substrate 0001-plane in this investigation, in convenience LED structure：GaN deposited on low-temperature buffer layer at 550 ℃, n type Si Doping at 1030 ℃, we deposite ten-period InGaN/GaN multi-quantum well(MQW) as a active layer at 750 ℃, P-AlGaN grown at 910 ℃,A Mg doped P-GaN layer grown at 1000 ℃. Based on convenience LED structure to modulation P-AlGaN as a P-AlGaN/P-GaN superlattice structure ,it can be improve antistatic property and light output power,Under 20mA current injection,it was found that forward voltages can be decrease, the reason is P-AlGaN/GaN superlattice structure can be effectively spread laterial current, When human body mode (HBM) at minus 4000V, the superlattice structure yield rate from 74.16% raised to 96.67%, even thought the pulse voltage can be reach minus 8000V,We use APSYS software to simulation P-AlGaN/GaN superlattice structure,it was influences multi-quantum well(MQW) concentration distributed status,it was to get more closing at superlattice structure from simulation result ,the electric and hole concentration can be increased.the light output power was improved.
Growth of super lattice structure on p-layer in GaN-LED,experimental design for 3ports,modulation AlGaN thickness,Al concentration and Mg concentration,result is EBL as super lattice structure can improved output power and ESD ability.
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