Growth of superlattice structure on p-layer in GaN-LED
碩士 === 元智大學 === 光電工程學系 === 104 === Based on III-nitride semiconductor epitaxy growth on patterned sapphire substrate 0001-plane in this investigation, in convenience LED structure：GaN deposited on low-temperature buffer layer at 550 ℃, n type Si Doping at 1030 ℃, we deposite ten-period InGaN/GaN mul...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11817007615305912847 |