Substrate Current Characteristics for 28 nm HK/MG NMOSFETs under Hot Carrier Stress
碩士 === 國立臺北科技大學 === 機電整合研究所 === 104 === The hot carrier effect is usually monitored by the substrate current in submicrometer process. The substrate current is an important issue. Due to only a few recent researchers in-vestigating the substrate current of nano-node nMOSFETs under the hot carrier st...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4au4c8 |