Pattern Engineering in Smart-cut SOI before Bonding for Power MOSFET
碩士 === 東海大學 === 電機工程學系 === 104 === In this paper we propose a structure to improve the breakdown voltage and unify the electric field of a SOI LDMOSFET. The buried oxide layer of SOI wafers is patterning designed to change the dielectric material positions to adjust the electric field distribution...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93939585025234667210 |