Study on Reliability of P‐Channel FinFET Devices with Various Fin Numbers
碩士 === 國立高雄大學 === 電機工程學系碩士班 === 104 === The traditional planner MOSFET has been replaced under the development of FinFET. In order to achieve better electric characteristics and reliability, the FinFET structures are improved from double gate to tri-gate, and the multi-Fins structure is also utilize...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46163590987391078231 |