The Investigation of P-N Junction for N-Type FinFETs
碩士 === 國立高雄大學 === 電機工程學系碩士班 === 104 === FinFET has considered as one of the most promising options for future devices to replace planner MOSFETs. The N-type Tri-Gate FinFETs were studied in this work. The characteristics of P-N junction of FinFET devices with different channel lengths and Fin number...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/34922750400616004369 |