Fabrication of low-k porous SiO2/PLA hybrid film
碩士 === 國立臺灣科技大學 === 材料科學與工程系 === 104 === Silica (SiO2) materials are widely used as drug carriers, thermal insulators, and low-k dielectric materials. Furthermore, porous SiO2 is one of the candidates for low-k dielectrics due to its superior properties of low cost, high thermal stability, high chem...
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ndltd-TW-104NTUS55660602019-10-05T03:47:07Z http://ndltd.ncl.edu.tw/handle/7h7u8j Fabrication of low-k porous SiO2/PLA hybrid film 製備低介電多孔二氧化矽/聚乳酸複合膜 Tao-Hung Chang 張道弘 碩士 國立臺灣科技大學 材料科學與工程系 104 Silica (SiO2) materials are widely used as drug carriers, thermal insulators, and low-k dielectric materials. Furthermore, porous SiO2 is one of the candidates for low-k dielectrics due to its superior properties of low cost, high thermal stability, high chemical resistance, and low dielectric constant. So far, the common method of fabricating the porous SiO2 is the sol-gel method; however, this method contains the drawbacks of discontinuous process and long process time deteriorate poteneial, which is not suitable for mass production. This study proposed the one-step and continuous method of spray pyrolysis (SP) to prepare porous SiO2 particles. The experimental results showed that the various porous structure of SiO2 particles were achieved by using the mixed precursor solutions of tetraethyl orthosilicate and various pore-forming agents (agar, PEG 600, and F127) for SP. Moreover, the phase compositions were analyzed by X-ray diffraction, the surface morphologies and particle size distributions were characterized by scanning electron microscopy, and the geometry was observed by transmission electron microscopy. Also, the SP formation mechanisms of porous silica particles using various pore-forming( agents agar, PEG 600, and F127 )were discussed. Shao-ju Shih 施劭儒 2016 學位論文 ; thesis 96 zh-TW |
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碩士 === 國立臺灣科技大學 === 材料科學與工程系 === 104 === Silica (SiO2) materials are widely used as drug carriers, thermal insulators, and low-k dielectric materials. Furthermore, porous SiO2 is one of the candidates for low-k dielectrics due to its superior properties of low cost, high thermal stability, high chemical resistance, and low dielectric constant. So far, the common method of fabricating the porous SiO2 is the sol-gel method; however, this method contains the drawbacks of discontinuous process and long process time deteriorate poteneial,
which is not suitable for mass production.
This study proposed the one-step and continuous method of spray pyrolysis (SP) to prepare porous SiO2 particles. The experimental results showed that the various porous structure of SiO2 particles were achieved by using the mixed precursor solutions of tetraethyl orthosilicate and various pore-forming agents (agar, PEG 600, and F127) for SP.
Moreover, the phase compositions were analyzed by X-ray diffraction, the surface morphologies and particle size distributions were characterized by scanning electron microscopy, and the geometry was observed by transmission electron microscopy.
Also, the SP formation mechanisms of porous silica particles using various pore-forming( agents agar, PEG 600, and F127 )were discussed.
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author2 |
Shao-ju Shih |
author_facet |
Shao-ju Shih Tao-Hung Chang 張道弘 |
author |
Tao-Hung Chang 張道弘 |
spellingShingle |
Tao-Hung Chang 張道弘 Fabrication of low-k porous SiO2/PLA hybrid film |
author_sort |
Tao-Hung Chang |
title |
Fabrication of low-k porous SiO2/PLA hybrid film |
title_short |
Fabrication of low-k porous SiO2/PLA hybrid film |
title_full |
Fabrication of low-k porous SiO2/PLA hybrid film |
title_fullStr |
Fabrication of low-k porous SiO2/PLA hybrid film |
title_full_unstemmed |
Fabrication of low-k porous SiO2/PLA hybrid film |
title_sort |
fabrication of low-k porous sio2/pla hybrid film |
publishDate |
2016 |
url |
http://ndltd.ncl.edu.tw/handle/7h7u8j |
work_keys_str_mv |
AT taohungchang fabricationoflowkporoussio2plahybridfilm AT zhāngdàohóng fabricationoflowkporoussio2plahybridfilm AT taohungchang zhìbèidījièdiànduōkǒngèryǎnghuàxìjùrǔsuānfùhémó AT zhāngdàohóng zhìbèidījièdiànduōkǒngèryǎnghuàxìjùrǔsuānfùhémó |
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1719261805908328448 |