Hot Carrier Effect Research on Thick-Thin Gate ILFD and Study on Capacitive Cross-Coupled QILFD

碩士 === 國立臺灣科技大學 === 電子工程系 === 104 === Two divide-by-2 cross-coupled Injection Locked Frequency Dividers (ILFD) have been put under experimental stress conditions. Comparison of stress effects is made between thick-gate cross-coupled transistors and thin-gate cross-coupled transistors. Degradations d...

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Bibliographic Details
Main Authors: OSEL NOVANDI WITOHENDRO, 黃順源
Other Authors: Jang, Sheng-Lyang
Format: Others
Language:en_US
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/63110744094203938668

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