Hot Carrier Effect Research on Thick-Thin Gate ILFD and Study on Capacitive Cross-Coupled QILFD
碩士 === 國立臺灣科技大學 === 電子工程系 === 104 === Two divide-by-2 cross-coupled Injection Locked Frequency Dividers (ILFD) have been put under experimental stress conditions. Comparison of stress effects is made between thick-gate cross-coupled transistors and thin-gate cross-coupled transistors. Degradations d...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2016
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Online Access: | http://ndltd.ncl.edu.tw/handle/63110744094203938668 |