Hot Carrier Effect Research on Thick-Thin Gate ILFD and Study on Capacitive Cross-Coupled QILFD

• Main Authors: OSEL NOVANDI WITOHENDRO, 黃順源
• Other Authors: Jang, Sheng-Lyang
• Format: Others
• Language: en_US
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/63110744094203938668

碩士 === 國立臺灣科技大學 === 電子工程系 === 104 === Two divide-by-2 cross-coupled Injection Locked Frequency Dividers (ILFD) have been put under experimental stress conditions. Comparison of stress effects is made between thick-gate cross-coupled transistors and thin-gate cross-coupled transistors. Degradations due to hot-carrier stress have been found. The cross-coupled MOSFETs have different effect on power consumption than the injection MOSFET, increasing it while the latter is decreasing it. Increase in output power, decrease in locking range and optimal gate bias shifting to a higher level are observed as contribution from injection MOSFET’s degradation. The experiment successfully isolate the effect of stress-degraded injection MOSFET. An LC-tank divide-by-2 Quadrature ILFD (QILFD) using the capacitive cross-coupled oscillator has been studied. The quadrature operation is obtained by ring transformer coupling. The highest FOM achieved is 3.78 at VDD = 0.85V, VR = 0.8V, with locking range from 9.1 to 12.8 GHz. The lowest power consumption is 7.39mW at VDD = 0.7V, VR = 0.8V, with FOM of 3.44 and locking range from 9.6 to 12.4 GHz. The widest locking range is achieved at VDD = 1V, VR = 1.1V, with FOM of 1.81 and locking range from 8.6 to 13.7GHz. The power consumption can be controlled by changing the gate bias (VR) of switching transistors. The QILFD can operate at VDD < VR conditions. Higher Figure of Merit (FoM) still require VDD > VR condition.