Surface passivation of c-Si wafers using a-Si:H layers prepared by pulsed high frequency plasma enhanced chemical vapor deposition technique
碩士 === 國立臺灣科技大學 === 化學工程系 === 104 === Hydrogenated amorphous Si (a-Si:H) thin films were prepared on single crystal Si (c-Si) wafers to form a-Si:H/c-Si heterojuction structure using high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD) technique at a reactant dilution ratio of [H2]...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/10402645498100064842 |