Characteristic Improvement of Al2O3/InAsPSb Metal-Oxide-Semiconductor Capacitor and Analysis of Accumulation Frequency Dispersion
碩士 === 國立臺灣大學 === 電子工程學研究所 === 104 === The research of the post metallization annealing in forming gas was performed to study the effect of fixed charge and its interface on InAsPSb with atomic layer deposition Al2O3 oxide. And it is not only to improve fixed charge and border trap of the metal-oxid...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91518833073659897923 |