Fabrication of Normally-off AlGaN/GaN MOSHEMTs and Analysis of Interface Traps
碩士 === 國立臺灣大學 === 電子工程學研究所 === 104 === In this thesis, we focus on the fabrication of normally-off AlGaN/GaN high electron mobility transistor (HEMT). First of all, we discusse the effect of fluoride-based plasma treatment and gate recess process on the shift of threshold voltages of the device. T...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/55621462954241867824 |