A Study of Diode Memory with Multi-Layer Structures
碩士 === 國立臺灣大學 === 光電工程學研究所 === 104 === In this thesis, we demonstrate a new device mechanism and material system for realizing phase change memory (PCM). We combine two device concepts into one single device, i.e., phase change memory and resonant tunneling diode. Metal oxide were used as the phase...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20872502003149552424 |