The Photoelectric Effect of High Quality GaN-based Light-Emitting Diodes
碩士 === 國立臺灣大學 === 光電工程學研究所 === 104 === In the light-emitting diodes (LEDs) technology, we usually use sapphire for the substrate. Due to the large lattice mismatch between GaN and Sapphire substrate, GaN will get compressive strain from substrate and exhibits lots of threading dislocations(TDs), dec...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71528374502421970750 |