Fabrication and Current Collapse Characterizations of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors

Fabrication and Current Collapse Characterizations of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors

碩士 === 國立臺灣大學 === 光電工程學研究所 === 104 === The applications of gallium nitride high electron mobility transistors (GaN HEMTs) have become more and more important in recent years. Due to the outstanding material properties including wide-band-gap and high electron mobility, GaN HEMTs are widely applied t...

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Bibliographic Details
Main Authors:	Shin-Yi Ho, 何昕逸
Other Authors:	黃建璋
Format:	Others
Language:	en_US
Published:	2016
Online Access:	http://ndltd.ncl.edu.tw/handle/45664428998273880681

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