Fabrication and Current Collapse Characterizations of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors
碩士 === 國立臺灣大學 === 光電工程學研究所 === 104 === The applications of gallium nitride high electron mobility transistors (GaN HEMTs) have become more and more important in recent years. Due to the outstanding material properties including wide-band-gap and high electron mobility, GaN HEMTs are widely applied t...
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45664428998273880681 |