Characterization of graphene grown by plasma-assisted chemical vapor deposition method
碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 104 === By plasma assisted chemical vapor deposition (PACVD) method, we have successfully grown graphene and its related materials from 1050oC down to 350oC, and characterized them. We found that the thickness of PACVD-grown graphene is larger than that of a CVD-g...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28742962176693605799 |