| Summary: | 碩士 === 國立臺灣師範大學 === 機電工程學系 === 104 === In this work, the low-temperature plasma treatment was employed to modify the polarity of tin-oxide (SnO) semiconductor and investigated the potential applications of SnO thin-film transistors. The intrinsic p-type SnO TFT showed a low threshold voltage of -0.81 V, a field-effect mobility of 5.4 cm2 V −1 s −1 , and on/off current ratio of 2.28×103. To further improve the performance of intrinsic TFT devices, the low-temperature fluorine plasma treatment was conducted on p-type SnO channel. Under a variety of experimental comparison, the p-type SnO TFT with fluorine plasma treatment showed the significant improvement on current ratio by at least one order of magnitude (7.7x105), which could be attributed to the passivation effect of fluorine atoms on SnO channel. We also investigate the oxygen plasma effect on intrinsic p-type SnO channel. After an appropriate oxygen plasma treatment, the p-type SnO channel transferred to be n-type one due to the increase of oxygen concentration. The optimal n-type SnO TFT exhibited a threshold voltage of -1.49 V, a high field-effect mobility of 30 cm2 V −1 s −1, and on/off current ratio of 7.8x103. Therefore, the channel modification engineering by simple plasma treatment could be useful for the fabrication of low-temperature electronics. Besides, the illumination test of visible light was also performed to evaluate the carrier response between n- and p-type tin-oxide channels. The current response of transistor dependent to bandgap of SnO channel (n- or p-type) and light wavelength showed the potential application of Photodetector.
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