Study on the Characteristics of Thin-Film Transistor and Photodetector Based on Plasma-Modified Polycrystalline Tin-Oxide Channels
碩士 === 國立臺灣師範大學 === 機電工程學系 === 104 === In this work, the low-temperature plasma treatment was employed to modify the polarity of tin-oxide (SnO) semiconductor and investigated the potential applications of SnO thin-film transistors. The intrinsic p-type SnO TFT showed a low threshold voltage of -0.8...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93002499316592366895 |