Improvement of Contact Resistance and Leakage Current for FinFETs by Adopting Ge Pre-Amorphization Implantation
碩士 === 國立清華大學 === 工程與系統科學系 === 104 === 因申請專利緣故,資料延後公開
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2016
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Online Access: | http://ndltd.ncl.edu.tw/handle/92197321391993049667 |