Improvement of Contact Resistance and Leakage Current for FinFETs by Adopting Ge Pre-Amorphization Implantation

碩士 === 國立清華大學 === 工程與系統科學系 === 104 === 因申請專利緣故,資料延後公開

Bibliographic Details
Main Authors: Chen, Chin Yu, 陳慶育
Other Authors: Wu, Yung Hsien
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/92197321391993049667