Low-Voltage Operation of Flash Memory by Adopting Nitrogen-Incorporated ZrTiO4 and HfZrO as Charge Trapping Layer
碩士 === 國立清華大學 === 工程與系統科學系 === 104 === 因申請專利緣故，資料延後公開
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20357187966442875685 |