Channel Shapes by Hydrogen Plasma and High Temperature Treatments on Electrical Properties of SOI FinFETs
碩士 === 國立清華大學 === 工程與系統科學系 === 104 === When transistors’ feature sizes scale down lower than 20 nm, conventional MOSFET confront some issues such as the effects of subthreshold leakage, gate leakage, and so on. These issues can be resolved by FinFET structure. The electrical characteristics of FinFE...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69089606317984150608 |