Study of SONOS Nonvolatile Memory with Double Stacked Si3N4 Trapping layer and Nanowires Gate-All-Around Structure
碩士 === 國立清華大學 === 工程與系統科學系 === 104 === In this study, the “SONOS Nonvolatile Memory with Double Stacked Nitride Trapping layer and Nanowires Gate-All-Around Structure”, the characteristics of memory are improved by oxidation trimming nanowires and doubled stacked silicon nitride fabrications. Compar...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/40536091957557115117 |