Hetero-epitaxial growth Si1-xGex film via a low temperature aluminum-induced solid phase epitaxy (AI-SPE) process
博士 === 國立清華大學 === 工程與系統科學系 === 104 === Reducing the solar cell manufacture cost makes the concentrator photovoltaic (CPV) has more competitive in the market. One of the potential method is to use a single crystal silicon substrate (sc-Si) substituted germanium or gallium arsenide (GaAs) substrate. G...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
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2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93453236658056864632 |