Applications of Band Engineering and Nitrogen Profiles in Charge-Trapping Flash Memory Devices

博士 === 國立清華大學 === 工程與系統科學系 === 104 === As the demands for personal cameras, laptops, and smart-phones increase, development of nonvolatile memory (NVM) is rapidly expanding. NVM devices with faster programming/erasing (P/E), excellent retention and endurance characteristics are required. To achieve...

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Bibliographic Details
Main Authors: Ye, Zong-Hao, 葉宗浩
Other Authors: Chang-Liao, Kuei-Shu
Format: Others
Language:en_US
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/69517986608575673412