Applications of Band Engineering and Nitrogen Profiles in Charge-Trapping Flash Memory Devices
博士 === 國立清華大學 === 工程與系統科學系 === 104 === As the demands for personal cameras, laptops, and smart-phones increase, development of nonvolatile memory (NVM) is rapidly expanding. NVM devices with faster programming/erasing (P/E), excellent retention and endurance characteristics are required. To achieve...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2015
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Online Access: | http://ndltd.ncl.edu.tw/handle/69517986608575673412 |