Characteristics of Germanium Buried Channel and Low-Temperature Formed Stacked Trapping Layers on Poly Silicon Nanowire Flash Memory device
碩士 === 國立清華大學 === 工程與系統科學系 === 104 === With the recent development of Big Data, the demand of nonvolatile memory increases rapidly. Therefore, nonvolatile memory devices of high storage density with high performance and reliability are necessary. In order to improve the efficiency, high- conce...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/s89f6w |