GaN Schottky Barrier Diodes on Si Substrate with Low Leakage Current and Low Turn On Voltage
碩士 === 國立清華大學 === 電子工程研究所 === 104 === The properties of gallium nitride are suitable for operation under high temperature and high voltage, mainly because of the wide bandgap(3.4eV), good thermal stability, high critical electric field(3.4MV/cm) ,and high electron saturation velocity(2×107cm/s) of t...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56344256403802621214 |